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Anh Tuan Hoang†, Luhing Hu†, Beom Jin Kim†, Tran Thi Ngoc Van, Kyeong Dae Park, Yeonsu Jeong, Kihyun Lee, Seunghyeon Ji, Juyeong Hong, Ajit Kumar Katiyar, Bonggeun Shong, Kwanpyo Kim, Seongil Im, Woon Jin Chung, and Jong-Hyun Ahn* († equally contributed)
Low-Temperature Growth of MoS2 on Polymer and Thin Glass Substrates for Flexible Electronics
Nat. Nanotechnol., 18, 1439–1447
Date: Jul 27, 2023

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS2), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS2 on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS2 growth process, and that the transfer process degrades the electronic properties of MoS2. Here we report a strategy for directly synthesizing high-quality and high-crystallinity MoS2 monolayers on polymers and ultrathin glass substrates (thickness ~30 µm) at ~150 °C using metal–organic chemical vapour deposition. By avoiding the transfer process, the MoS2 quality is preserved. On flexible field-effect transistors, we achieve a mobility of 9.1 cm2 V−1 s−1 and a positive threshold voltage of +5 V, which is essential for reducing device power consumption. Moreover, under bending conditions, our logic circuits exhibit stable operation while phototransistors can detect light over a wide range of wavelengths from 405 nm to 904 nm.

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