Yonsei Advanced Science Institute

A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etchingwith 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) × 8 nm (bottom) with a density of ∼4 × 1010 pillars cm−2 on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.